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Пошуковий запит: (<.>A=Slipokurov V$<.>) | |||
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Загальна кількість знайдених документів : 8 Представлено документи з 1 до 8 |
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| 1. | 
Zorenko A. V. Hybrid-integrated version of SBD amplitude detector intended for the 400-600 GHz frequency range [Електронний ресурс] / A. V. Zorenko, A. V. Bychok, V. V. Shynkarenko, Ya. Ya. Kudryk, V. S. Slipokurov // Semiconductor physics, quantum electronics & optoelectronics. - 2014. - Vol. 17, № 4. - С. 346-348. - Режим доступу: http://nbuv.gov.ua/UJRN/MSMW_2014_17_4_8 A finline version of detector with flat Schottky barrier diodes is developed. It is intended for operation in the 400 - 600 GHz frequency range. The detector electrical parameters are studied. The detector conversion ratio at a frequency of 420 GHz is 97 V/W. | ||
| 2. |
Kudryk Ya. Ya. Determination of the Schottky barrier height in diodes based on Au-TiB2-n-SiC 6H from the current-voltage and capacitance-voltage characteristics [Електронний ресурс] / Ya. Ya. Kudryk, V. V. Shynkarenko, V. S. Slipokurov, R. I. Bigun, R. Ya. Kudryk // Semiconductor physics, quantum electronics & optoelectronics. - 2014. - Vol. 17, № 4. - С. 398-402. - Режим доступу: http://nbuv.gov.ua/UJRN/MSMW_2014_17_4_18 We present the results of investigation of the barrier height and ideality factor in Schottky barrier diodes based on Au - TiB | ||
| 3. |
Slipokurov V. S. Methodological aspects of measuring the resistivity of contacts to high-resistance semiconductors [Електронний ресурс] / V. S. Slipokurov, M. N. Dub, A. K. Tkachenko, Ya. Ya. Kudryk // Semiconductor physics, quantum electronics & optoelectronics. - 2015. - Vol. 18, № 2. - С. 144-146. - Режим доступу: http://nbuv.gov.ua/UJRN/MSMW_2015_18_2_8 Proposed has been the method of formation a thermally stable ohmic contact to the diamond without high-temperature annealing with the resistivity ~50 to <$E80~roman {Ohm~cdot~cm} sup 2> when <$ER sub s ~=~3~cdot~10 sup 7 roman Ohm>/<$B0>. Being based on the analysis of correlation dependence between the resistivity of contact and that of semiconductor for the unannealed sample and the sample after rapid thermal annealing it has been shown that variation of the contact resistance on the plate is related with that of semiconductor and may be caused by inhomogeneity of the dopant distribution. | ||
| 4. |
Belyaev A. E. Structural and electrical-physical properties of the ohmic contacts based on palladium to n+-n-n++-n+++-InP [Електронний ресурс] / A. E. Belyaev, N. A. Boltovets, A. B. Bobyl, V. P. Kladko, R. V. Konakova, Ya. Ya. Kudryk, M. U. Nasyrov, A. V. Sachenko, V. S. Slipokurov, A. S. Slepova // Semiconductor physics, quantum electronics & optoelectronics. - 2015. - Vol. 18, № 4. - С. 391-395. - Режим доступу: http://nbuv.gov.ua/UJRN/MSMW_2015_18_4_5 Presented in this paper are experimental data on structural properties of contact metallization and temperature dependence of the specific contact resistance for ohmic contacts Au - Ti - Pd -n<^>+ | ||
| 5. |
Romanets P. M. Theoretical and experimental modelling the specific resistance of vertical ohmic contacts Au–Ti–Pd–n+-n-n+-Si in IMPATT diodes [Електронний ресурс] / P. M. Romanets, A. E. Belyaev, A. V. Sachenko, N. S. Boltovets, V. V. Basanets, R. V. Konakova, V. S. Slipokurov, A. A. Khodin, V. A. Pilipenko, V. V. Shynkarenko // Semiconductor physics, quantum electronics & optoelectronics. - 2016. - Vol. 19, № 4. - С. 366-370. - Режим доступу: http://nbuv.gov.ua/UJRN/MSMW_2016_19_4_9 The method of electrophysical diagnostic of n+ - n - n+ structures at the etching stage of manufacturing process of power IMPATT diodes has been proposed. A numerical method for specific contacts resistance calculation of vertical ohmic contacts with a non-uniform doping level has been developed. Vertical ohmic contacts Au - Ti - Pd - n+ - n - n+ - Si both before and after etching were used for experimental checking this model. It has been computed the value of contact resistance in the interface metal-n+ with correction of contribution of n+ - n and n - n+ resistances to the total resistance. The values of total effective resistances of vertical ohmic contacts Au - Ti - Pd - n+ - n - n+ - Si may be calculated using the Cox-Strack method. We used solutions of Laplace's equation for computation of specific contact resistance metal-n+ without contribution of interfaces n+ - n and n - n+. The values of specific contact resistance were ~10-6 Ohm · cm2. This method allows to control the manufacture process by monitoring the changes in electrophysical properties of the structure between etching cycles. | ||
| 6. |
Romanets P. M. Peculiarities of study of Au–Ti–Pd–n+-n-n+-Si multilayer contact structure to avalanche transit-time diodes [Електронний ресурс] / P. M. Romanets, R. V. Konakova, M. S. Boltovets, V. V. Basanets, Ya. Ya. Kudryk, V. S. Slipokurov // Semiconductor physics, quantum electronics & optoelectronics. - 2019. - Vol. 22, № 1. - С. 34-38. - Режим доступу: http://nbuv.gov.ua/UJRN/MSMW_2019_22_1_8 In this work, the method of electrophysical diagnostics of ohmic contacts to n<^>+ | ||
| 7. |
Kudryk Ya. Ya. Influence of parameters inherent to ohmic contacts on properties of microwave avalanche transit-time diodes [Електронний ресурс] / Ya. Ya. Kudryk, V. S. Slipokurov // Semiconductor physics, quantum electronics & optoelectronics. - 2019. - Vol. 22, № 2. - С. 193-200. - Режим доступу: http://nbuv.gov.ua/UJRN/MSMW_2019_22_2_11 In this paper, a review of microwave avalanche transit-time diode (IMPATT diode) structures has been presented. The structure of IMPATT diode with a sharp p-n junction on Si has been considered, and functions of the ohmic contacts have been shown. Physical and technical requirements for contacts have been formulated as based on their functional purpose and the existing technological base. A review of existing ohmic contacts and their ranking in terms of suitability and promising use in IMPATT diode have been made. The structure of metallization for IMPATT diode was chosen in the framework of the specificity of the IMPATT diode operation. | ||
| 8. | 
Zinovchuk A. V. Fluctuations of piezoelectric polarization in III-nitride quantum wells [Електронний ресурс] / A. V. Zinovchuk, D. A. Stepanchikov, R. Yu. Vasylieva, V. S. Slipokurov // Ukrainian journal of physics. - 2023. - Vol. 68, № 1. - С. 47-52. - Режим доступу: http://nbuv.gov.ua/UJRN/Ukjourph_2023_68_1_8 | ||
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